澳洲幸运8人工计划软件

StarPower Semiconductor Ltd. is a leading power module company located in Jiaxing China about 59 miles southeast of Shanghai. Founded in 2005 with venture funds, StarPower designs and manufactures IGBT/MOSFET/IPM/FRD/Rectifier modules and customized modules for applications in the area of inverters, welding machines, inductive heating, UPS, EV, solar/wind power and etc. in the power range of 0.5kW up to more than 1MW

In the past fiscal year, StarPower achieved a record turnover of 80 million US dollars with 400 employees. StarPower produces semiconductors on a total production area of 70.700 squares meters

Modules are manufactured in a clean-room environment. The high-quality production sites are equipped with state-of-the art production facilities, such as a fully automated production and testing line in compliance with ISO 9001, ISO 14001 quality management system and TS 16949 automotive standard

Through heavy investment in R&Ds, StarPower offers a broad range of quality and eco-friendly products to our customers. We are committed to excellence in all things we do. The company has one of the best production lines and well-trained workforce in the industry

澳洲幸运8玩法技巧

Table of Contents

  1. Low Power Modules
  2. Medium Power Modules
  3. High Power Modules
  4. SIC

Low Power IGBT Modules
Low Power Modules

Features:

  • Low V Trench IGBT technology
  • 10 short circuit capability
  • V with positive temperature coefficient
  • Low inductance
  • Maximum junction temperature 175°C

Medium Power IGBT Modules
Medium Power Modules

Features:

  • Low V Trench IGBT technology
  • 10 short circuit capability
  • V with positive temperature coefficient
  • Maximum junction temperature 175°C
  • Fast & soft reverse recovery anti-parallel FWD

High Power IGBT Modules
High Power Modules

Features:

  • Low V Trench IGBT technology
  • 10 short curcuit capability
  • V with positive temperature 175°C
  • Low inductace case
  • Isolated copper baseplate using DBC technology

SIC Power MOSFET
SIC

Features:

  • SiC power MOSFET
  • LOW R
  • Optimized intrinsic revese diode
  • Avalanche ruggedness
  • Low inductance case

澳洲幸运8计划软件


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